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An optimization procedure for MMIC large‐signal amplifiers
Author(s) -
D'agostino Stefano,
Paoloni Claudio
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19981220)19:6<386::aid-mop3>3.0.co;2-f
Subject(s) - signal (programming language) , mesfet , monolithic microwave integrated circuit , electronic engineering , amplifier , microwave , process (computing) , mixed signal integrated circuit , large signal model , integrated circuit , electronic circuit , engineering , computer science , electrical engineering , transistor , cmos , telecommunications , power (physics) , physics , voltage , quantum mechanics , field effect transistor , programming language , operating system
An optimization procedure for GaAs integrated circuits to achieve both small‐signal and large‐signal performance is proposed. Besides the geometrical dimensions of the circuit passive elements, the process parameters are used as optimization variables to define two separate sets of optimization variables for small‐signal and large‐signal optimization. A large‐signal MESFET model, based on simple expressions among circuit elements and process parameters, allows an effective implementation of the proposed optimization method in commercial CAD tools. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 19: 386–388, 1998.