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An experimental technique for the design of optimized resonant‐cap circuits for microwave IMPATT oscillators and amplifiers
Author(s) -
Kar Subal
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19981005)19:2<81::aid-mop1>3.0.co;2-b
Subject(s) - amplifier , microwave , electronic circuit , electronic engineering , impatt diode , electrical engineering , microwave engineering , engineering , telecommunications , cmos , diode
The design of optimized resonant‐cap circuits for IMPATT oscillators and amplifiers at X‐band (8–12) GHz based on experimental results has been reported in this paper. The microwave power output (≈1 W) of the oscillator and the gain (≈20 dB) of the amplifier realized with the IMPATT device mounted in the optimally designed resonant‐cap circuit may be useful for solid‐state microwave communication and radar applications. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 19: 81–84, 1998.