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Active layer parameter optimization for high‐power Si 2 mm pulsed IMPATT diode
Author(s) -
Zemliak A.,
Celaya C.,
Garcia R.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199809)19:1<4::aid-mop2>3.0.co;2-g
Subject(s) - impatt diode , diode , materials science , optoelectronics , microwave , doping , semiconductor , silicon , power (physics) , microwave power , semiconductor device , layer (electronics) , engineering , physics , telecommunications , nanotechnology , quantum mechanics
On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed‐mode 2 mm silicon diode. The energy characteristics of the semiconductor structures for high‐power pulsed IMPATT diodes with a permanent and complex doping profile are optimized. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 19: 4–9, 1998.