Premium
Short‐pulse generation from single‐mode InGaAs/GaAs laser diodes by large‐signal RF modulation
Author(s) -
Rafailov E. U.,
Birkin D.,
Avrutin E. A.,
Sibbett W.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19980805)18:5<354::aid-mop14>3.0.co;2-2
Subject(s) - diode , modulation (music) , microwave , optoelectronics , laser , signal (programming language) , materials science , gallium arsenide , laser diode , optics , pulse (music) , physics , telecommunications , engineering , detector , computer science , acoustics , programming language
The generation of optical pulses as short as 70 ps has been demonstrated using large‐signal modulation at 1.4–2.7 GHz applied to InGaAs/GaAs laser diodes. The maximum average power in the fundamental mode was ∼15 mW, and a period‐doubling effect was observed. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 354–356, 1998.