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Pulsed microwave S ‐parameters of a silicon germanium heterojunction bipolar transistor
Author(s) -
Wartenberg Scott A.,
Westgate Charles R.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199807)18:4<258::aid-mop6>3.0.co;2-d
Subject(s) - heterojunction bipolar transistor , bipolar junction transistor , materials science , microwave , optoelectronics , heterostructure emitter bipolar transistor , transistor , heterojunction , silicon , silicon germanium , electrical engineering , voltage , engineering , telecommunications
This paper presents the first published S ‐parameters of an Si/Si 1− x Ge x /Si heterojunction bipolar transistor (HBT) measured under pulsed bias/pulsed RF conditions. Comparison is made to those of an Si bipolar junction transistor (BJT) fabricated using the same mask set. Measurements made over a 400 μs pulse show how device self‐heating dramatically affects the microwave‐frequency response of the two devices. The results emphasize the need for accurate characterization of microwave Si devices in pulsed applications. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 258–264, 1998.