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Microwave properties of Sr 0.5 Ba 0.5 TiO 3 thin‐film interdigitated capacitors
Author(s) -
Kirchoefer S. W.,
Pond J. M.,
Carter A. C.,
Chang W.,
Agarwal K. K.,
Horwitz J. S.,
Chrisey D. B.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19980620)18:3<168::aid-mop3>3.0.co;2-d
Subject(s) - capacitor , microwave , materials science , dielectric , optoelectronics , ferroelectricity , semiconductor , thin film , film capacitor , electrical engineering , engineering , voltage , telecommunications , nanotechnology
Interdigitated capacitors have been fabricated on ferroelectric thin films of Sr 0.5 Ba 0.5 TiO 3 . These devices have been characterized at microwave frequencies from 50 MHz to 20 GHz, and have a 3.4:1 tuning range over a 1–40 V bias range. This is shown to originate from a relative dielectric constant tuning of 3.8:1. The microwave losses exhibited by these capacitors are comparable to those of commercially available semiconductor varactors for frequencies greater than 1 GHz, and should be useful for tunable microwave circuits in some 300 K applications. Published 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 168–171, 1998.