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Analysis of channel breakdown phenomenon in HFETs by a quasi‐two‐dimensional simulation
Author(s) -
Butel Y.,
De Jaeger J. C.,
Hedoire J.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199805)18:1<6::aid-mop3>3.0.co;2-k
Subject(s) - microwave , breakdown voltage , avalanche breakdown , offset (computer science) , channel (broadcasting) , electronic engineering , materials science , optoelectronics , voltage , electrical engineering , engineering , computer science , telecommunications , programming language
The avalanche channel breakdown in HFETs is studied by means of a quasi‐two‐dimensional simulation. The influence of the gate recess parameters is analyzed for different structures, considering both the breakdown voltage and the microwave performance. Accurate predictions can be obtained, in particular, the gates recess offset influence which constitutes the most important parameter. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 18: 6–14, 1998.