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Polarization properties for the electromagnetic field in an unbounded n ‐type semiconductor medium
Author(s) -
Vegni Lucio,
Toscano Alessandro
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19980405)17:5<332::aid-mop17>3.0.co;2-5
Subject(s) - polarization (electrochemistry) , semiconductor , physics , electromagnetic field , microwave , electromagnetic radiation , maxwell's equations , plane wave , optics , condensed matter physics , quantum electrodynamics , classical mechanics , quantum mechanics , chemistry
Abstract In this paper, we derive and discuss the polarization properties of a plane wave traveling in an unbounded n ‐type semiconductor medium. Starting from the Maxwell's equations and the constitutive relations, we first compute the formal expression of the electromagnetic field associated with the two eigenmodes of propagation sustained in the n ‐type semiconductor medium. After that, we determine the conditions that the constitutive parameters must satisfy in order to have linear and circular polarization, and discuss possible applications of the n ‐type semiconductor medium. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 17: 332–335, 1998.