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Studies on low‐leakage surface‐undoped InAlAs/InGaAs‐doped channel HFETs
Author(s) -
Wang H.,
Liao H.,
Gilbert M.,
Dosanjh S.,
YoungSmith K.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19980405)17:5<315::aid-mop12>3.0.co;2-2
Subject(s) - leakage (economics) , optoelectronics , materials science , doping , microwave , quantum tunnelling , engineering , telecommunications , economics , macroeconomics
Very low, steady tunneling gate leakage of 80 nA/mm at V gs =10 V and excess impact ionization gate leakage of 700 nA/mm at V ds =2 V have been achieved on InAlAs/InGaAs/InP‐doped channel HFETs with an undoped InGaAs cap layer. Double bell‐shaped peaks of excess gate leakage are observed in these very low‐leakage devices, and are reported for the first time. The mechanism for the observation of a subpeak in gate leakage is discussed. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 17: 315–317, 1998.