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High‐power and linearity performances of a four‐emitter finger AlGaAs/GaAs HBT in S ‐band
Author(s) -
Cazarré A.,
Andrieux L.,
Tasselli J.,
Camps T.,
Marty A.,
Bailbé J. P.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19980405)17:5<306::aid-mop9>3.0.co;2-g
Subject(s) - heterojunction bipolar transistor , common emitter , linearity , optoelectronics , materials science , microwave , power (physics) , electrical engineering , engineering , transistor , bipolar junction transistor , physics , telecommunications , voltage , quantum mechanics
An electrothermal model of AlGaAs/GaAs HBT has been validated both for the dc and high‐power S ‐band operating mode. The four‐emitter finger HBT presented, with an emitter unit area of 6×60 μm 2 , exhibits an output power of about 1 W for a power‐added efficiency of 50% at 1.8 GHz with good linearity. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 17: 306–308, 1998.