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CPW low‐pass filters on silicon substrate for multilayer MMICs
Author(s) -
Budimir Djuradj,
Robertson Ian D.,
Khalid A. H.,
Rezazadeh A. A.
Publication year - 1998
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19980205)17:2<125::aid-mop13>3.0.co;2-7
Subject(s) - chebyshev filter , materials science , coplanar waveguide , electrical impedance , monolithic microwave integrated circuit , optoelectronics , microwave , characteristic impedance , impedance matching , substrate (aquarium) , filter (signal processing) , high impedance , conductor , wave impedance , electrical engineering , electronic engineering , engineering , amplifier , telecommunications , composite material , cmos , oceanography , geology
Abstract A multilayer coplanar waveguide low‐pass filter on an Si substrate fabricated by using MMIC technology is presented, and the performance is investigated experimentally and with electromagnetic simulations. The filter is a Chebyshev type consisting of three low‐impedance sections and two high‐impedance sections. The low‐impedance sections have a characteristic impedance of 3 Ω. The high‐impedance lines use a narrow center conductor mounted on top of the polyimide layers in order to achieve as high an impedance as possible (100 Ω). © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 17: 125–128, 1998.