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A general solution to laser‐induced heating and melting in semiconductors
Author(s) -
Shen ZhongHua,
Lu Jian,
Ni XiaoWu
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19971205)16:5<303::aid-mop11>3.0.co;2-4
Subject(s) - semiconductor , melting temperature , microwave , laser , materials science , microwave heating , silicon , simple (philosophy) , phase (matter) , computation , optoelectronics , optics , engineering , physics , computer science , composite material , telecommunications , quantum mechanics , philosophy , epistemology , algorithm
An analytical method for treating the problem of laser heating and melting is developed in this paper by suggesting a simple and reasonable temperature profile form. Temperature distributions in material before melting as well as after melting are given, and the movement of the phase interface is also obtained. As an illustrative example, computations are carried out on silicon material, and the results are in good agreement with those obtained by other authors. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 303–307, 1997.