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A direct extraction formula for the FET temperature noise model
Author(s) -
Garcia Mikael,
Stenarson Jörgen,
Zirath Herbert,
Angelov Ilcho
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199711)16:4<208::aid-mop4>3.0.co;2-p
Subject(s) - noise (video) , microwave , y factor , noise figure , noise temperature , electronic engineering , extraction (chemistry) , range (aeronautics) , electrical engineering , materials science , optoelectronics , engineering , acoustics , physics , computer science , telecommunications , chemistry , cmos , amplifier , chromatography , composite material , artificial intelligence , image (mathematics)
This paper presents an analytical expression for the conversion from a measured noise figure to the associated drain noise temperature in the FET temperature noise model. A commercially available GaAs FET is modeled. Comparisons between measured and modeled noise parameters are presented in the frequency range 2–26 GHz. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 208–212, 1997.