Premium
Detection of plasma produced in the interaction between an Nd:YAG laser and a metal–nitride–oxide–semiconductor‐type charge‐coupled device
Author(s) -
Ni XiaoWu,
Lu Jian,
Shen ZhongHua,
Chen JianPing,
Zhang YiXin,
Zhu Tuo
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19971020)16:3<160::aid-mop10>3.0.co;2-9
Subject(s) - laser , plasma , materials science , nitride , semiconductor , optoelectronics , microwave , oxide , optics , metal , physics , nanotechnology , layer (electronics) , quantum mechanics , metallurgy
In this paper, the interaction process of a high‐power Q‐switched YAG laser and a metal–nitride–oxide–semiconductor (MNOS)‐type charge‐coupled device (CCD) is studied with the help of the plasma shape and structure under the repeated actions of laser pulses. Mach–Zehnder interferograms of plasmas and related experimental results produced by a 1064 nm laser beam with a pulse width of 15 ns acting upon the MNOS‐type CCD are obtained. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 160–162, 1997.