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Extraction of HBT small‐signal model parameters based on a statistical approach
Author(s) -
Ghaddab H.,
Gannouchi F. M.,
Choubani F.,
Bouallegue A.
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19971005)16:2<115::aid-mop14>3.0.co;2-7
Subject(s) - heterojunction bipolar transistor , microwave , extraction (chemistry) , signal (programming language) , electronic engineering , small signal model , equivalent circuit , engineering , statistical model , electrical engineering , mathematics , computer science , statistics , telecommunications , transistor , voltage , chemistry , bipolar junction transistor , chromatography , programming language
An extraction technique to determine the small‐signal HBT equivalent circuit is presented. Some of the extrinsic element values are extracted by using an analytical approach, while the remaining ones are calculated adopting a statistical method. All of the model elements are uniquely determined. Satisfactory results are obtained for two different size HBTs up to 30 GHz. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 115–119, 1997.