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Photoluminescence study of highly doped, tensile‐strained GaAs/In 0.07 Al 0.93 As quantum wells
Author(s) -
Balan Vishnu,
DanielsRace Theda,
McNeil Laurie E.
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199709)16:1<7::aid-mop3>3.0.co;2-h
Subject(s) - photodetection , photoluminescence , quantum well , optoelectronics , doping , polarization (electrochemistry) , materials science , microwave , optics , chemistry , physics , photodetector , quantum mechanics , laser
A photoluminescence study of highly doped tensile‐strained GaAs quantum wells is made to investigate the feasibility of achieving polarization‐independent photodetection. A simulation procedure to predict the photoluminescence peaks is also developed which shows good agreement with the experimental results. A primitive structure for achieving polarization‐independent photodetection is also proposed. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 16: 7–11, 1997.