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Experimental validation of a large‐signal MESFET model for submicron‐gate‐length devices
Author(s) -
D'Agostino Stefano,
Paoloni Claudio
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199707)15:4<227::aid-mop11>3.0.co;2-4
Subject(s) - mesfet , microwave , signal (programming language) , electronic engineering , large signal model , small signal model , engineering , process (computing) , electrical engineering , physics , computer science , transistor , field effect transistor , telecommunications , power (physics) , voltage , programming language , operating system , quantum mechanics
The performance of a physics‐based large‐signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 μm, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5‐μm gate‐length MESFET process. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 15: 227–229, 1997