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An actively compensated monolithic transimpedance amplifier
Author(s) -
Giannini Franco,
Limiti Ernesto,
Orengo Giancarlo
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19970620)15:3<121::aid-mop1>3.0.co;2-i
Subject(s) - transimpedance amplifier , mesfet , amplifier , electrical engineering , direct coupled amplifier , microwave , optoelectronics , inductor , engineering , electronic engineering , materials science , operational amplifier , transistor , cmos , field effect transistor , telecommunications , voltage
An actively compensated transimpedance amplifier has been designed and realized in 0.5‐μm GaAs MESFET monolithic technology. Active inductors have been used to reduce overall chip size and to improve amplifier performance. Major measured features of the realized amplifier are a 50‐dB Ω transimpedance gain and better than −14‐dB output match in the 50 MHz‐3.2 GHz band. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 15: 121–123, 1997.