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Dual‐gate FET millimeter‐wave frequency divider
Author(s) -
Shan Chen Ru,
Tai Zhang Qing,
Yung Edward K. N.
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199703)14:4<210::aid-mop5>3.0.co;2-m
Subject(s) - microwave , extremely high frequency , frequency divider , electrical engineering , wilkinson power divider , optoelectronics , frequency multiplier , bandwidth (computing) , millimeter , current divider , fet amplifier , physics , materials science , engineering , power dividers and directional couplers , telecommunications , optics , rf power amplifier , amplifier
Abstract The feasibility of using a dual‐gate FET as the frequency divider in Ka band with a wide bandwidth has been demonstrated. If we appropriately bias and match a dual‐gate FET, we obtain an operating frequency range as wide as 10 GHz. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 14, 210–213, 1997.