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K‐band monolithic mixer with the use of a GaAs cold FET
Author(s) -
Gosse E.,
Picheta L.,
Allamando E. A.
Publication year - 1997
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199703)14:4<199::aid-mop1>3.0.co;2-e
Subject(s) - monolithic microwave integrated circuit , microwave , optoelectronics , electrical engineering , materials science , engineering , w band , gallium arsenide , nonlinear system , electronic engineering , physics , telecommunications , cmos , amplifier , quantum mechanics
K‐band mixers are realized on GaAs MMIC technology by with the use of a cold FET device. With this submicrometer device, two configurations are studied and realized: the series and the shunt. Experimental results given by these two configurations are compared to theoretical predictions obtained on a microwave nonlinear simulator with the use of an original modeling of the cold FET, which is suggested in this article. © 1997 John Wiley & Sons, Inc. Microwave Opt Technol Lett 14, 199–202 1997.