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A highly accurate MESFET model to predict the nonlinear behavior of a linear power amplifier
Author(s) -
Roh Tae Moon,
Suh Youngseok,
Kim Young Sik,
Park Wee Sang,
Kim Bumman
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199611)13:4<184::aid-mop3>3.0.co;2-i
Subject(s) - mesfet , amplifier , nonlinear system , nonlinear model , power (physics) , electronic engineering , current (fluid) , channel (broadcasting) , linear model , engineering , physics , computer science , topology (electrical circuits) , electrical engineering , voltage , transistor , field effect transistor , thermodynamics , cmos , quantum mechanics , machine learning
A new channel current model to accurately represent I–V curves has been developed, and its effect on the nonlinear parameters of MESFET models such as I ds , C gs , C gd , and C ds has been investigated for linear power amplifier design. The channel current model should be constructed from pulsed I–V data at operation bias point, and the nonlinear behavior of a GaAs MESFET is strongly dependent on the C gs model. © 1996 John Wiley & Sons, Inc.