Premium
High‐responsivity InGaAs/InP‐based MSM photodetector operating at 1.3‐μm wavelength
Author(s) -
Matin M. A.,
Song K. C.,
Robinson B. J.,
Simmons J. G.,
Thompson D. A.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19960820)12:6<310::aid-mop2>3.0.co;2-i
Subject(s) - responsivity , photodetector , optoelectronics , materials science , capacitance , wavelength , optics , bandwidth (computing) , indium gallium arsenide , gallium arsenide , physics , electrode , telecommunications , engineering , quantum mechanics
A high‐responsivity, low‐capacitance and high‐speed metal‐semiconductor‐metal photodetector (MSM‐PD) with layer structure In 0.85 Ga 0.15 P/InP/InGaAs/InP has been fabricated and characterized. For a 50 μm × 50 μm device with 2‐μm finger width and 2‐μm finger spacing we obtained a front illumination at 1.3‐μm wavelength responsivity of 0.71–0.73 A/W at 5‐V bias. To the best of our knowledge this is the highest front illumination responsivity for MSM‐PD. The mesa structure devices show a very low capacitance of less than 1 pF and a transient response bandwidth of 10 GHz at 3 dB. © 1996 John Wiley & Sons, Inc.