Premium
Rigorous analysis of circuit parameter extraction from an FDTD simulation excited with a resistive voltage source
Author(s) -
Pekonen Olli P. M.,
Xu Jie,
Nikoskinen Keijo I.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199607)12:4<205::aid-mop8>3.0.co;2-k
Subject(s) - voltage source , resistive touchscreen , finite difference time domain method , voltage , excitation , generator (circuit theory) , output impedance , capacitance , current source , electrical impedance , mesh analysis , parasitic capacitance , electrical engineering , equivalent circuit , electronic engineering , acoustics , engineering , physics , power (physics) , voltage droop , optics , electrode , quantum mechanics
FDTD simulations excited with a resistive voltage source are under study in this article. Focus is on the parasitic capacitance of the excitation. It is shown that the resistance of the excitation is actually a frequency‐dependent impedance. Because the resistive voltage source operates as a current source, errors are generated to the generator voltage of the excitation and, furthermore, to the extracted circuit parameters. Effective methods are presented to overcome this problem. ©1996 John Wiley & Sons, Inc.