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Measurement of thresholds of damage to a charge‐coupled device caused by a Q‐switched laser
Author(s) -
Lu Jian,
Ni XaioWu,
Lin ZhenHua,
He AnZhi
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199603)11:4<194::aid-mop8>3.0.co;2-f
Subject(s) - laser , materials science , optoelectronics , charge (physics) , charge coupled device , optics , energy (signal processing) , physics , quantum mechanics
The interaction process of laser and MOS‐type charge‐coupled devices (CCD) has been analyzed in brief. Several kinds of damage thresholds, including optical breakdown threshold, direct damage threshold, and laser energy threshold (which leads to complete failure of the device) produced by a Q‐switched Nd:YAG laser have been put forward and obtained experimentally. © 1996 John Wiley & Sons, Inc.