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A high‐speed silicon photoconductive switch
Author(s) -
Wu Tungxi,
Shang Baoheng,
Vander Vorst André
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199603)11:4<177::aid-mop3>3.0.co;2-h
Subject(s) - biasing , photoconductivity , silicon , optoelectronics , materials science , electrical engineering , reverse bias , current (fluid) , leakage (economics) , pulse (music) , voltage , engineering , diode , economics , macroeconomics
We present in this article a high‐speed silicon photoconductive switch by which electric pulses of amplitude higher than 1000 V and pulse widths of less than 30 ns have been obtained at a 50‐O load under 1500‐V dc biasing. During the preparation of the switches two novel techniques were introduced. These reduce the carriers' lifetimes considerably and keep the leakage current at a very low low level under high dc biasing. © 1996 John Wiley & Sons, Inc.