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60‐ and 77‐GHz monolithic amplifiers utilizing InP‐based HEMTs and coplanar waveguides
Author(s) -
Berg M.,
Dickmann J.,
Guehl R.,
Bischof W.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19960220)11:3<139::aid-mop8>3.0.co;2-m
Subject(s) - amplifier , coplanar waveguide , electronic circuit , optoelectronics , biasing , materials science , extremely high frequency , integrated circuit , gallium arsenide , logic gate , electrical engineering , engineering , physics , optics , microwave , telecommunications , voltage , cmos
Monolithic millimeter‐wave amplifiers for the frequency ranges of 60 and 77 GHz on an InP substrates are presented. Both circuits use lattice‐matched InAlAs/InGaAs/InP HEMTs with triangular‐shaped gates and a gate length of L G = 0.25 μm. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuits are fully passivated and contain common ports for the gate and the drain bias. A gain of 15 dB and input and output matching better than −8 dB were achieved for the 60— and 77—GHz amplifiers, respectively. © 1996 John Wiley & Sons, Inc.