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Microwave performance of InP‐based HEMTs for low‐voltage application
Author(s) -
Strähle S.,
Henle B.,
Lee L.,
Künzel H.,
Hackbarth T.,
Dickmann J.,
Kohn E.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19960220)11:3<131::aid-mop6>3.0.co;2-m
Subject(s) - microwave , materials science , electrical engineering , optoelectronics , low voltage , voltage , engineering , telecommunications
Usually high power gain is achieved at the expense of reduced f t . In this investigation a high f max /f t ratio of 2.6 is obtained in combination with a f t * L g product of 39 GHz μm, equivalent to an effective velocity of 2.45 * 10 7 cm/s. Despite a relaxed gate length of approximately 0.5 μm, these features were obtained at low drain bias of V d = 1.5 V. © 1996 John Wiley & Sons, Inc.