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The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field‐effect transistors
Author(s) -
Auer U.,
Reuter R.,
Ellrodt P.,
Heedt C.,
Prost W.,
Tegude F. J.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19960220)11:3<125::aid-mop4>3.0.co;2-n
Subject(s) - heterojunction , optoelectronics , materials science , field effect transistor , valence band , impact ionization , leakage (economics) , transistor , electrical engineering , ionization , chemistry , voltage , band gap , engineering , ion , organic chemistry , economics , macroeconomics
Holes generated by impact ionization in the channels of InP‐based heterostructure field‐effect transistors can tunnel to the gate electrode and contribute to the parasitic gate current. By inserting pseudomorphic AlAs‐spacer layers in order to increase the valence‐band discontinuity, the channel‐to‐gate transfer rate of holes can be effectively reduced. © 1996 John Wiley & Sons, Inc.