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S‐parameter extraction of transistors under class‐c bias
Author(s) -
Tsang K. F.,
Morgan G. B.,
Yip P. C. L.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(19960205)11:2<95::aid-mop15>3.0.co;2-6
Subject(s) - amplifier , transistor , electronic engineering , class (philosophy) , bipolar junction transistor , extraction (chemistry) , bipolar transistor biasing , computer science , electrical engineering , engineering , artificial intelligence , chemistry , voltage , chromatography , cmos
A novel technique for extracting the large‐signal S parameters of a bipolar transistor under class‐c bias has been developed. To verify the applicability of the developed technique, an amplifier at 870 MHz was implemented. Experimental results showed that the amplifier performance was close to prediction. © 1996 John Wiley & Sons, Inc.