Premium
Analytical charge control model for GaAs/AlGaAs‐based multiple‐quantum‐well power hemts
Author(s) -
Nawaz M.,
Jensen Geir U.
Publication year - 1996
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/(sici)1098-2760(199601)11:1<1::aid-mop1>3.0.co;2-q
Subject(s) - charge control , transistor , microwave , quantum , charge (physics) , optoelectronics , quantum well , poisson's equation , electron , power (physics) , high electron mobility transistor , materials science , computational physics , electronic engineering , physics , voltage , quantum mechanics , engineering , laser , battery (electricity)
We have developed an analytical charge control model for GaAs/AlGaAs multiple‐quantum‐well (MQW‐) based high‐electron‐mobility transistors. The validity of the developed model was tested with numerical calculations based on self‐consistent solutions of Poisson and Schrödinger equations. Excellent agreement was achieved with both numerical calculations and experimental data. Furthermore, simple expressions are developed for the location of sheet charge density from the top and bottom interfaces inside the GaAs quantum well. The developed model provides a good tool for the design and optimization of microwave circuit design. ©1996 John Wiley & Sons, Inc.