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Preparation of oxygen gas barrier poly(ethylene terephthalate) films by deposition of silicon oxide films plasma‐polymerized from a mixture of tetramethoxysilane and oxygen
Author(s) -
Inagaki N.,
Tasaka S.,
Hiramatsu H.
Publication year - 1999
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/(sici)1097-4628(19990321)71:12<2091::aid-app20>3.0.co;2-a
Subject(s) - materials science , oxygen permeability , silicon , oxygen , oxide , chemical engineering , silicon oxide , plasma enhanced chemical vapor deposition , thin film , nanotechnology , chemistry , organic chemistry , silicon nitride , engineering , metallurgy
To prepare silicon oxide (SiOx)‐deposited poly(ethylene terephthalate) films with high oxygen gas barrier capability, SiOx deposition by plasma polymerization has been investigated from the viewpoint of chemical composition. Tetramethoxysilane (TMOS) is suitable as a starting material for the synthesis of the SiOx films. The SiOx deposition under self‐bias, where the etching action occurs around an electrode surface, is effective in eliminating carbonaceous compounds from the deposited SiOx films. There is no difference in the chemical composition between the SiOx films deposited under self‐bias and under no self‐bias. The SiOx films are composed of a main component of SiOSi networks and a minor component of carbonized carbons. The SiOx films deposited under no self‐bias from the TMOS/O 2 mixture show good oxygen gas barrier capability, but the SiOx films deposited under the self‐bias show poor capability. The minimum oxygen permeation rate for poly(ethylene terephthalate) films deposited SiOx film is 0.10 cm 3 m −2 day −1 atm −1 , which corresponds to an oxygen permeability coefficient of 1.4 × 10 −17 cm 3 ‐cm cm −2 s −1 cm −1 Hg for the SiOx film itself. © 1999 John Wiley & Sons, Inc. J Appl Polym Sci 71: 2091–2100, 1999