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Effect of NA‐light radiation on the optical gap and crystal structure of AgNO 3 ‐diffused PVDF sensor
Author(s) -
Tawansi A.,
Oraby A. H.,
Ahmed E.,
Abdelrazek E. M.,
Abdelaziz M.
Publication year - 1998
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/(sici)1097-4628(19981128)70:9<1759::aid-app14>3.0.co;2-m
Subject(s) - polyvinylidene fluoride , irradiation , materials science , relaxation (psychology) , charge carrier , radiation , spectroscopy , microscopy , optical microscope , optoelectronics , optics , analytical chemistry (journal) , composite material , polymer , chemistry , scanning electron microscope , physics , psychology , social psychology , chromatography , quantum mechanics , nuclear physics
A casting method was used to prepare polyvinylidene fluoride (PVDF) and 1 wt % MnCl 2 ‐filled PVDF films. AgNO 3 was allowed to diffuse through the filled films. The 3 types of the prepared films were irradiated by Na light with various doses. The post‐irradiation and relaxation effects were investigated using ultraviolet–visible spectroscopy, X‐ray analysis, and optical microscopy. The results were interpreted on the bases of a theoretical model previously suggested for a build‐up and decay of radiation‐induced conductivity associated with the transition of charge carriers in the presence of a uniform trap distribution. Various structures were proposed for the diffused AgNO 3 before and after irradiation. It was found that the induced change in optical gap, due to 5‐min irradiation time for the AgNO 3 diffused films, exhibits no relaxation phenomenon. Accordingly, this film can be used in photorecording applications. © 1998 John Wiley & Sons, Inc. J Appl Polym Sci 70: 1759–1767, 1998