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Electrical properties of metal (indium)/polyaniline Schottky devices
Author(s) -
Pandey S. S.,
Ram M. K.,
Srivastava V. K.,
Malhotra B. D.
Publication year - 1997
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/(sici)1097-4628(19970926)65:13<2745::aid-app17>3.0.co;2-w
Subject(s) - polyaniline , aniline , materials science , indium , polymer chemistry , copolymer , capacitance , conductive polymer , thermal stability , metal , schottky diode , chemical engineering , analytical chemistry (journal) , optoelectronics , composite material , polymer , chemistry , electrode , polymerization , organic chemistry , metallurgy , diode , engineering
Schottky devices were fabricated by thermal evaporation of indium on chemically synthesized polyaniline, poly( o ‐anisidine), and poly(aniline‐ co‐ortho ‐anisidine) copolymer. Electrical characterization of each of these devices was carried out using current ( I )‐voltage ( V ) and capacitance ( C )‐voltage ( V ) measurements. The value of various junction parameters such as rectification ratio, ideality factor, and barrier heights of an In/poly(aniline‐ co‐o ‐anisidine) Shootky device were found to be 300, 4.41, and .4972 V compared to the values of 60, 5.5, and 0.5101 V obtain for an In/polyaniline device, respectively. © 1997 John Wiley & Sons, Inc. J Appl Polym Sci 65: 2745–2748, 1997