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Physical properties of epoxy molding compound for semiconductor encapsulation according to the coupling treatment process change of silica
Author(s) -
Kim Whan Gun,
Ryu Je Hong
Publication year - 1997
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/(sici)1097-4628(19970906)65:10<1975::aid-app15>3.0.co;2-w
Subject(s) - epoxy , materials science , composite material , molding (decorative) , coupling (piping) , coating , mold , physical property
The change of physical properties of an epoxy‐molding compound (EMC) for semiconductor encapsulation according to the coupling treatment process change was investigated. Three different coupling treatment processes were applied in this study: the pretreatment method (PM), the internal pretreatment method (IPM), and the integral addition method (IAM). Especially, we suggested a simple and economic process, the IPM process, in which the drying and powdering process is excluded compared with the PM process. The optimum content range of the coupling agent is 1.0–2.0 wt % based on the weight of the filler, which is about a 1.3–2.5 coating layer. The flexural strength and internal stress of EMC made by the IPM process is almost equivalent to that made by the PM. We applied the model of complex layers of a silane coupling agent at the filler/matrix interface in interpretating the mechanical and thermal properties of EMC and obtaining the relationships between physical properties and the coupling process. It can be concluded that the IPM process is an effective and economic process to be able to obtain a good reliable EMC with strong mechanical strength and low internal stress. © 1997 John Wiley & Sons, Inc. J Appl Polym Sci 65: 1975–1982, 1997