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Modification of polyethylene properties by implantation with F + ions and iodination
Author(s) -
Jankovskij O.,
Švorčík V.,
Rybka V.,
Hnatowicz V.
Publication year - 1996
Publication title -
journal of applied polymer science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.575
H-Index - 166
eISSN - 1097-4628
pISSN - 0021-8995
DOI - 10.1002/(sici)1097-4628(19960531)60:9<1455::aid-app20>3.0.co;2-#
Subject(s) - ion , materials science , iodine , ion implantation , irradiation , analytical chemistry (journal) , sheet resistance , melting point , electrical resistivity and conductivity , surface layer , polyethylene , saturation (graph theory) , doping , radiochemistry , chemistry , layer (electronics) , composite material , metallurgy , organic chemistry , engineering , physics , mathematics , optoelectronics , chromatography , combinatorics , nuclear physics , electrical engineering
Polyethylene samples implanted with 150 keV F + ions to the doses 10 11 −10 15 cm −2 were doped with iodine by exposing them to iodine vapors at 90°C for 3 h. The iodine depth profiles, measured by Rutherford back‐scattering techniques, evolve dramatically with increasing implanted doses, from “bumpy” profiles at lower fluences to a “depleted” one comprising two concentration maxima with no iodine in between observed at highest dose. The areal density of iodine incorporated into the 500‐nm‐thick surface layer is proportional to the ion dose for the doses ≤ 1 × 10 13 cm −2 and it achieves a saturation or declines at higher doses. The results support the concept of enhanced iodine diffusion in the radiation‐damaged surface layer and its trapping on the radiation defects within. The sheet resistivity of as‐implanted PE is practically constant, independent of the implanted dose. Iodine doping of the ion‐implanted PE samples results in immediate, strong decrese of the sheet resistivity by 3–4 orders of magnitude which, however, is not stable. The measured temperature dependence of the sheet resistance indicates p ‐semiconducting character of ion‐implanted and iodinated samples at the temperatures below the PE melting point. The iodine redistribution and/or escape with increasing temperature is observed. © 1996 John Wiley & Sons, Inc.