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Bethe–Bloch stopping‐power parameters for GaAs and ZnSe
Author(s) -
Porter L. E.
Publication year - 1998
Publication title -
international journal of quantum chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.484
H-Index - 105
eISSN - 1097-461X
pISSN - 0020-7608
DOI - 10.1002/(sici)1097-461x(1998)70:4/5<919::aid-qua37>3.0.co;2-t
Subject(s) - stopping power , ion , energy (signal processing) , semiconductor , atomic physics , excitation , power (physics) , value (mathematics) , physics , projectile , chemistry , quantum mechanics , mathematics , statistics
If one is to calculate the stopping power for a specified projectile–target combination within the energy interval of applicability of modified Bethe–Bloch theory, values of several parameters appearing in the formulation must be ascertained. In the past, the author has established such values for numerous target materials through fits of stopping‐power measurements with modified Bethe–Bloch theory. However, the semiconductor materials ZnSe and GaAs have not yet been thus characterized. A set of very recent measurements of the stopping powers of each compound for low‐energy protons and alpha particles, reported by members of the Helsinki group, has been analyzed in order to remedy this dearth of parameter values. Moreover, some corresponding measurements for 7 Li ions traversing ZnSe have been analyzed for the purpose of obtaining the value of a single effective charge parameter. Results of these studies are reasonably consistent with expectations, and values are recommended for the mean excitation energy and the Barkas‐effect parameter for each compound. © 1998 John Wiley & Sons, Inc. Int J Quant Chem 70: 919–924, 1998