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Raman characterization of SiN x deposition on undoped Ga 0.47 In 0.53 As material grown on InP substrate
Author(s) -
Boudart B.,
Gaquière C.,
Constant M.,
Lorriaux A.,
Lefebvre N.
Publication year - 1999
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/(sici)1097-4555(199908)30:8<715::aid-jrs439>3.0.co;2-t
Subject(s) - raman spectroscopy , substrate (aquarium) , materials science , deposition (geology) , dielectric , layer (electronics) , chemical vapor deposition , analytical chemistry (journal) , optoelectronics , mineralogy , chemistry , nanotechnology , optics , paleontology , oceanography , physics , chromatography , sediment , biology , geology
Effects of SiN x deposition on undoped Ga 0.47 In 0.53 As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga 0.47 In 0.53 As material, whatever the thickness and the temperature deposition used in the technological process. Some changes in the Raman spectra due to surface disorder effects were evidenced for the Ga 0.47 In 0.53 As samples passivated at 300 °C. These effects were confirmed by photocarrier‐assisted experiments. Copyright © 1999 John Wiley & Sons, Ltd.