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Resonant Acoustic PhononRaman Scattering in Magnetic and Electric Fields
Author(s) -
Ruf T.,
Sapega V. F.,
Cardona M.
Publication year - 1996
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/(sici)1097-4555(199603)27:3/4<271::aid-jrs965>3.0.co;2-#
Subject(s) - condensed matter physics , superlattice , brillouin zone , landau quantization , raman scattering , phonon , scattering , physics , excitation , electric field , phonon scattering , x ray raman scattering , magnetic field , raman spectroscopy , optics , quantum mechanics
Abstract The Raman efficiency for scattering of acoustic phonons in semiconductor quantum wells and superlattices exhibits strong resonances at interband critical points of the electronic structure. Owing to Landau or Stark quantization of electron and hole states in an external magnetic or electric field, such resonances can be tuned with respect to the excitation energy and detailed investigations of their character are possible. Layer thickness fluctuations and interface roughness in real samples are the origin of disorder‐induced resonant acoustic phonon Raman scattering which manifests itself in a continuous emission background where modes from the whole mini‐Brillouin zone participate. In such scattering processes, crystal momentum conservation is relaxed. The fundamental properties of this effect are summarized and its application to studies of quantum well and superlattice electronic structure is illustrated.