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Raman Spectroscopy of Doping Sheets and Heterointerfaces inIII–V Semiconductor Structures
Author(s) -
Wagner J.,
Schmitz J.,
Newman R. C.,
Roberts C.
Publication year - 1996
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/(sici)1097-4555(199603)27:3/4<231::aid-jrs958>3.0.co;2-w
Subject(s) - raman spectroscopy , heterojunction , monolayer , doping , materials science , superlattice , molecular vibration , semiconductor , condensed matter physics , optoelectronics , nanotechnology , optics , physics
Raman spectroscopy was used to study vibrational modes of Si δ‐doping sheets and Si monolayers inserted in GaAs and to investigate mechanical interface modes in InAs/GaSb and InAs/AlSb heterostructures. Increasing the concentration of Si embedded in GaAs in a single layer from 10 12 –10 13 cm −2 , corresponding to typical concentrations for Si δ‐doping in GaAs, to a monolayer (ML) coverage (1 ML=6.2×10 14 cm −2 ) leads to a discontinuous change in the Raman spectrum from local vibrational modes of substitutional Si to a vibrational band at significantly higher wavenumbers. This band has been identified with vibrational modes of two‐dimensional clusters of covalently bonded Si embedded in GaAs. In InAs/GaSb superlattices both GaAs‐like and InSb‐like interface modes were resolved, depending on the intended formation of either Ga—As or In—Sb interface bonds. For InAs/AlSb heterostructures, however, only the InSb‐like interface mode was observed, indicating the formation of InSb‐like interface bonds, irrespective of the intended growth of either In—Sb or Al—As interface bonds.