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Simultaneous Measurements of Stokes and Anti‐Stokes Raman Spectra for Thermal Characterization of Diode Laser Facet
Author(s) -
Gu X. J.
Publication year - 1996
Publication title -
journal of raman spectroscopy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.748
H-Index - 110
eISSN - 1097-4555
pISSN - 0377-0486
DOI - 10.1002/(sici)1097-4555(199601)27:1<83::aid-jrs919>3.0.co;2-k
Subject(s) - raman spectroscopy , wafer , characterization (materials science) , laser , diode , materials science , facet (psychology) , optics , spectral line , semiconductor , optoelectronics , semiconductor laser theory , thermal , stokes shift , chemistry , physics , nanotechnology , luminescence , psychology , social psychology , personality , astronomy , meteorology , big five personality traits
A method for the simultaneous measurement of Stokes and anti‐Stokes Raman spectra for thermal characterization of semiconductors is described. It was tested on a silicon wafer and then applied to real‐time temperature measurements on an AlGaAs laser mirror facet.