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Error factors in quantitative total reflection x‐ray fluorescence analysis
Author(s) -
Mori Yoshihiro,
Uemura Kenichi
Publication year - 1999
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/(sici)1097-4539(199911/12)28:6<421::aid-xrs384>3.0.co;2-p
Subject(s) - spurious relationship , x ray fluorescence , error detection and correction , optics , sample (material) , reflection (computer programming) , diffraction , wafer , analyte , surface roughness , computer science , materials science , statistics , physics , algorithm , fluorescence , mathematics , chemistry , nanotechnology , thermodynamics , programming language , composite material
This paper reviews and discusses the error factors in quantitative total reflection x‐ray fluorescence analysis, primarily with regard to the surface contamination of silicon wafers. The error factors were classified into three origins: instrumental, sample and data processing. The instrumental error factors originate from source x‐ray stability, accuracy of the mechanical glancing angle, position accuracy of sample stage and spurious peaks from the detection system. The sample error factors arise from lateral and depth distribution of the analyte, surface roughness and diffraction of the primary x‐rays. The data processing error factors are from interfering peaks and background definition. The accuracy and detection limit are affected by all the error sources listed above. Of these factors, the depth distribution of the analyte is the most important, because this factor is often overlooked and because it is difficult to control. Copyright © 1999 John Wiley & Sons, Ltd.