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High‐resolution x‐ray spectroscopy with superconducting tunnel junctions
Author(s) -
Hettl P.,
Angloher G.,
Feilitzsch F. v.,
Höhne J.,
Jochum J.,
Kraus H.,
Mössbauer R. L.
Publication year - 1999
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/(sici)1097-4539(199909/10)28:5<309::aid-xrs341>3.0.co;2-1
Subject(s) - full width at half maximum , tunnel junction , aluminium , materials science , detector , substrate (aquarium) , semiconductor detector , superconductivity , superconducting tunnel junction , optics , resolution (logic) , spectroscopy , noise (video) , optoelectronics , analytical chemistry (journal) , physics , chemistry , quantum tunnelling , condensed matter physics , metallurgy , josephson effect , artificial intelligence , image (mathematics) , oceanography , computer science , pi josephson junction , chromatography , quantum mechanics , geology
An energy resolution of Δ E = 12 eV (FWHM) was measured for the 55Mn Kα 1 line ( E = 5.90 keV) using a single superconducting Al/Al x O y /Al tunnel junction. The total detector area of 100× 100 µm was illuminated, while a slit mask of about 150 µm width was used to shadow the detector leads and substrate area from the impinging x‐rays. The total electronic noise contribution to the energy resolution was measured as Δ E elec = 7 eV (FWHM). The process of tunnel junction fabrication was optimized towards a reproducible and high‐quality growth of the tunnel barrier. High‐quality aluminium films promote long quasi‐particle lifetimes and ensure reproducible tunnel barrier growth. The residual resistance ratio of a 1 µm thick aluminium test film was about 100. Copyright © 1999 John Wiley & Sons, Ltd.