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Determination of Layer Thicknesses by Total Electron Yield Measurements—Substrate Method
Author(s) -
Ebel Horst,
Svagera Robert,
Mantler Michael,
Ebel Maria F.
Publication year - 1997
Publication title -
x‐ray spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.447
H-Index - 45
eISSN - 1097-4539
pISSN - 0049-8246
DOI - 10.1002/(sici)1097-4539(199701)26:1<28::aid-xrs181>3.0.co;2-1
Subject(s) - overlayer , substrate (aquarium) , yield (engineering) , layer (electronics) , materials science , electron , thin layers , range (aeronautics) , thin film , instrumentation (computer programming) , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , composite material , geology , physics , computer science , chromatography , oceanography , quantum mechanics , operating system
The application of total electron yield (TEY) measurements to the determination of layer thicknesses is described, presenting an introduction to the principles of TEY measurements, the instrumentation and the evaluation of measured signals. The formulation of the theoretical correlation between measured TEY jumps from substrate elements and the thickness of an overlayer is presented. The concept of quantitative thickness determinations by TEY is demonstrated on thin layers of Al x Ga 1‐x As on GaAs and on thin Ag layers on GaAs substrates. The relative error in layer thickness is found to be less than 10% in the thickness range 1–100 nm. © 1997 by John Wiley & Sons, Ltd.