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Angle and energy distributions of neutral atoms sputtered from Ni 3 Al(100)
Author(s) -
King Bruce V.,
Zimmermann C.,
Riederer Donald E.,
Rosencrance Scott W.,
Garrison Barbara J.,
Winograd Nicholas
Publication year - 1998
Publication title -
rapid communications in mass spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.528
H-Index - 136
eISSN - 1097-0231
pISSN - 0951-4198
DOI - 10.1002/(sici)1097-0231(19980930)12:18<1236::aid-rcm318>3.0.co;2-7
Subject(s) - chemistry , atomic physics , ionization , sputtering , energetic neutral atom , nickel , flux (metallurgy) , layer (electronics) , ion , molecular physics , thin film , nanotechnology , physics , materials science , organic chemistry
The energy and angular distributions of Ni and Al atoms sputtered from Ni 3 Al(100) by 8 keV Ar + have been measured using multiphoton resonance ionization detection. The Al atoms, which originate entirely from the top atomic layer of Ni 3 Al(100), are predominantly sputtered along close packed 〈110〉 directions. On the other hand the sputtered Ni flux, which arises from both the first and second layers, has a large component normal to the surface. Molecular dynamics computer simulations agree well with experimental results and suggest that the normal emission of Ni atoms arises primarily from second‐layer atoms. © 1998 John Wiley & Sons, Ltd.

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