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An HSF‐SIMS Investigation of the Prephosphatation Contribution to the Phosphatation Process of Silicon Steel Surface
Author(s) -
Allali H.,
Embarek M. Ben,
Debré O.,
Nsouli B.,
Oladipo A.,
Roche A.,
Thomas J.P.
Publication year - 1997
Publication title -
rapid communications in mass spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.528
H-Index - 136
eISSN - 1097-0231
pISSN - 0951-4198
DOI - 10.1002/(sici)1097-0231(19970830)11:13<1377::aid-rcm940>3.0.co;2-a
Subject(s) - chemistry , secondary ion mass spectrometry , silicon , ion , phosphate , analytical chemistry (journal) , mass spectrometry , extraction (chemistry) , deposition (geology) , layer (electronics) , chromatography , paleontology , organic chemistry , sediment , biology
Secondary ion mass spectrometry based on High energy (MeV) Ar 3+ ions and Fast extraction (time‐of‐flight or TOF) has been used for investigating the prephosphatation contribution to the phosphatation process of silicon steel sample surface. The so‐called HSF‐SIMS technique allows easy identification and semi‐quantification of the Solid material‐specific ions such as Na + , Na 2 OH + , PO − 2 and PO − 3 . A high sensitivity for phosphate species present on steel surfaces is observed, enabling one to study the effects of pre‐ and post‐deposition treatments on the state of the surface phosphate layer. Finally, the prospect for quantitative analysis is demonstrated by the good correlation between measured secondary ion yields and superficial concentration of the deposited phosphate. © 1997 John Wiley & Sons, Ltd.