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Synthesis and lithographic characterization of poly[(dihydrocarveol)‐ co ‐(1,1‐dimethylethyl bicyclo[2.2.1]hept‐5‐ene‐2‐carboxylate)‐ co ‐(maleic anhydride)]
Author(s) -
Hwang SeokHo,
Jung JaeChang
Publication year - 1999
Publication title -
polymer international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.592
H-Index - 105
eISSN - 1097-0126
pISSN - 0959-8103
DOI - 10.1002/(sici)1097-0126(199909)48:9<851::aid-pi228>3.0.co;2-z
Subject(s) - resist , polymer chemistry , carboxylate , polymer , maleic anhydride , ammonium hydroxide , materials science , thermal stability , polymerization , chemistry , copolymer , nuclear chemistry , organic chemistry , layer (electronics)
Abstract A new ArF single‐layer resist polymer, poly(dihydrocarveol‐ co ‐1,1‐dimethylethyl bicyclo[2.2.1]hept‐5‐ene‐2‐carboxylate‐ co ‐maleic anhydride) has been synthesized by radical polymerization. The molar composition of synthesized resist polymer was confirmed by elemental analysis. The obtained molar composition was 0.25:0.35:0.40. This resist polymer was found to be stable up to 230 °C, but above 250 °C it underwent rapid thermal deprotection of the tert ‐butyl groups by releasing carbon dioxide and 2‐methylpropene. The deprotection temperature was established by DSC and TGA. Using the resist, 0.14 µm L/S pattern was obtained at 26 mJ/cm −2 doses, using an ArF stepper and the developer of 2.38 wt% tetramethyl ammonium hydroxide aqueous solution. © 1999 Society of Chemical Industry