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In situ growth and characterization of ultrahard thin films
Author(s) -
Bengu E.,
CollazoDavila C.,
Grozea D.,
Landree E.,
Widlow I.,
Guruz M.,
Marks L.D.
Publication year - 1998
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/(sici)1097-0029(19980915)42:4<295::aid-jemt8>3.0.co;2-p
Subject(s) - thin film , materials science , in situ , characterization (materials science) , boron nitride , deposition (geology) , molecular beam epitaxy , nanotechnology , ion beam assisted deposition , focused ion beam , optoelectronics , epitaxy , ion beam , optics , ion , beam (structure) , chemistry , layer (electronics) , geology , paleontology , sediment , physics , organic chemistry
Results concerning the operation of a new ultrahigh vacuum (UHV) ion‐beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic‐boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ. Microsc. Res. Tech. 42:295–301, 1998. © 1998 Wiley‐Liss, Inc.