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Cross‐section TEM sample preparation of multilayer and poorly adhering films
Author(s) -
Weaver Louise
Publication year - 1997
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/(sici)1097-0029(19970301)36:5<368::aid-jemt4>3.0.co;2-h
Subject(s) - materials science , sample preparation , focused ion beam , aperture (computer memory) , cross section (physics) , transmission electron microscopy , thin film , optics , ion milling machine , beam (structure) , section (typography) , cathode ray , sample (material) , composite material , electron , nanotechnology , ion , computer science , chemistry , mechanical engineering , engineering , chromatography , physics , layer (electronics) , organic chemistry , quantum mechanics , operating system
The preparation of TEM cross‐section samples from multilayer films or poorly adhering films is discussed in detail in a step‐by‐step approach designed to enable a competent experimentalist to reproduce the technique. The samples are mounted on an aperture grid and mechanically polished to 2–3 μm in thickness. After ion beam milling for a short period of time (less than 1 hour), a large electron transparent area is obtained. Examples from several thin film systems are discussed. Microsc. Res. Tech. 36:368–371, 1997. © 1997 Wiley‐Liss, Inc.