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Brief communication: XTEM sample preparation technique for n‐type compound semiconductors using photochemical etching
Author(s) -
Tanaka Shigeyasu,
Fujii Hideki,
Hibino Michio
Publication year - 1996
Publication title -
microscopy research and technique
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.536
H-Index - 118
eISSN - 1097-0029
pISSN - 1059-910X
DOI - 10.1002/(sici)1097-0029(19961101)35:4<363::aid-jemt10>3.0.co;2-t
Subject(s) - compound semiconductor , sample (material) , etching (microfabrication) , semiconductor , optoelectronics , materials science , sample preparation , photochemistry , nanotechnology , chemistry , chromatography , epitaxy , layer (electronics)
A sample preparation technique based on photochemical etching (PCE) is described for cross‐sectional transmission electron microscopy (XTEM) of n‐type compound semiconductors. XTEM samples of an InGaAsP/InP single‐layer structure, prepared by using a moderately focused laser beam and Br 2 ‐methanol solution, gave high quality, damage‐free XTEM images. The PCE technique is applicable to other n‐type compound semiconductors. © 1996 Wiley‐Liss, Inc.