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Investigation of an Mo/SiO 2 interface by electron‐induced x‐ray emission spectroscopy
Author(s) -
Jonnard P.,
Bonnelle C.,
Bosseboeuf A.,
Danaie K.,
Beauprez E.
Publication year - 2000
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/(sici)1096-9918(200004)29:4<255::aid-sia736>3.0.co;2-d
Subject(s) - analytical chemistry (journal) , silicon , plasma enhanced chemical vapor deposition , silicon oxide , spectroscopy , oxide , electron , electron spectroscopy , sputter deposition , chemistry , chemical vapor deposition , sputtering , materials science , thin film , silicon nitride , nanotechnology , optoelectronics , physics , chromatography , quantum mechanics , organic chemistry
We have studied the solid/solid interface between Mo and SiO 2 films deposited, respectively, by magnetron d.c. sputtering and plasma‐enhanced chemical vapour deposition (PECVD). The sample depth profile was characterized by SIMS. We used electron‐induced x‐ray emission spectroscopy to characterize the interface from the valence Si 3p and O 2p spectral densities, which are very sensitive to the physicochemical environment, and the Si 2p→ 1s transition, which is sensitive to the oxidation degree of the silicon atoms. By gradually decreasing the emissive thickness, which is a function of the primary electron energy, we have shown the presence of an interfacial compound 2–4 nm thick that is not seen by SIMS. We suggest that this compound is an MoSiO mixed oxide in which the silicon atoms have an oxidation degree equal or close to that of silica. Copyright © 2000 John Wiley & Sons, Ltd.